Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays

Author

Ambrogio, Stefano ; Balatti, S. ; Ielmini, Daniele ; Gilmer, D.C.

Author_Institution

DEIB, Politec. di Milano, Milan, Italy

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

242

Lastpage

245

Abstract

Resistive switching memory (RRAM) is attracting strong interest for prolonging Moore´s law of future-generation memory and logic circuits. To enable the design of stand-alone and embedded RRAM, however, physically-based compact models are needed. This work presents a new analytical model for HfO₂-based RRAM and of the complementary resistive switch (CRS), consisting of an antiserial connection of two resistive devices. The model is validated against switching characteristics at increasing pulse width for both RRAM and CRS. The impact of the oxide resistivity on the CRS characteristics is discussed, highlighting the trade-off between off-state leakage and set/reset window.

Keywords

circuit optimisation; hafnium compounds; integrated circuit design; integrated circuit modelling; random-access storage; switching circuits; CRS; HfO₂; Moore law; analytical modelling; antiserial connection; complementary resistive switch crossbar arrays; embedded RRAM; future-generation memory; leakage optimization; logic circuits; off-state leakage; oxide resistivity; physically-based compact models; resistive devices; resistive switching memory; set-reset window; switching characteristics; Analytical models; Conductivity; Electrodes; Integrated circuit modeling; Resistance; Switches; Voltage measurement; Complementary Resistive Switching; Resistive RAM; compact model; resistive switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948805

Filename

6948805