• DocumentCode
    146083
  • Title

    Parameters extraction on HfOX based RRAM

  • Author

    Peng Huang ; Bing Chen ; Haitong Li ; Zhe Chen ; Bin Gao ; Xiaoyan Liu ; Jinfeng Kang

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2014
  • fDate
    22-26 Sept. 2014
  • Firstpage
    250
  • Lastpage
    253
  • Abstract
    In this work, a novel methodology including the extraction strategy and characterization procedure is developed to extract the physical parameters which dominate the switching characteristics of HfOX based RRAM devices. With the extracted parameters, the retention behaviors of HfOX based RRAM devices are simulated by the atom-level simulation tool and compared with the measurement. The agreement between the simulation and measurement verifies the validity of the developed methodology.
  • Keywords
    hafnium compounds; random-access storage; HfOX; RRAM devices; atom-level simulation tool; parameters extraction; physical parameters; retention behaviors; switching characteristics; Current measurement; Electron devices; Hafnium compounds; Resistance; Switches; Temperature measurement; Voltage measurement; RRAM; analytic model; parameters extraction; retention;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2014 44th European
  • Conference_Location
    Venice
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4799-4378-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2014.6948807
  • Filename
    6948807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=146083