Title :
Stacked inductors and transformers in CMOS technology
Author :
Zolfaghari, Alireza ; Chan, Andrew ; Razavi, Behzad
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
4/1/2001 12:00:00 AM
Abstract :
A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also introduced that achieve voltage gains of 1.8 to 3 at multigigahertz frequencies. The structures have been fabricated in standard digital CMOS technologies with four and five metal layers
Keywords :
CMOS integrated circuits; Q-factor; field effect MMIC; inductors; integrated circuit modelling; low-power electronics; 0.5 to 11.2 GHz; CMOS technology; closed-form expressions; multigigahertz frequencies; processing steps; self-resonance frequencies; stacked spiral inductors; voltage gains; CMOS technology; Closed-form solution; Energy loss; Frequency; Inductors; Magnetic resonance; Oscillators; Q factor; Spirals; Transformers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
