InP HBT driver circuit optimization for high-speed ETDM transmission

Author

Kauffmann, Nicolas ; Blayac, Sylvain ; Abboun, Miloud ; André, Philippe ; Aniel, Frédéric ; Riet, Muriel ; Benchimol, Jean-Louis ; Godin, Jean ; Konczykowska, Agnieszka

Volume

36

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

639

Lastpage

647

Abstract

The design of high-speed circuits and optimization of function of technological and geometrical parameters are presented. Various modeling aspects are discussed, such as model accuracy for InP heterojunction bipolar transistor and modeling with technological and geometrical parameters. MUX-driver design and optimization for 40-Gb/s ETDM transmission is presented. The impact of collector thickness (W_c) on driver performances is evaluated and assessed by circuit fabrication and measurements. Results of 40-Gb/s electrical measurements and optical experiment with realized MUX-driver module are presented

Keywords

III-V semiconductors; driver circuits; heterojunction bipolar transistors; indium compounds; optical communication equipment; time division multiplexing; very high speed integrated circuits; 40 Gbit/s; HBT driver circuit optimization; InP; MUX-driver design; VHSICs; circuit fabrication; collector thickness; driver performances; geometrical parameters; high-speed ETDM transmission; model accuracy; modeling aspects; Design optimization; Driver circuits; Electric variables measurement; Geometrical optics; Heterojunction bipolar transistors; Indium phosphide; Optical device fabrication; Performance evaluation; Solid modeling; Thickness measurement;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.913742

Filename

913742