Silicon LEDs in FinFET technology

Author

Piccolo, G. ; Kuindersma, P.I. ; Ragnarsson, Lars-Ake ; Hueting, Raymond J. E. ; Collaert, Nadine ; Schmitz, Jurriaan

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

274

Lastpage

277

Abstract

We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.

Keywords

MOSFET; elemental semiconductors; infrared spectra; light emitting diodes; silicon; FinFET technology; Si; active light-emitting area; band-to-band light emission; light emitting diode; near-infrared emission; silicon LED; Electric potential; Junctions; Light emitting diodes; Logic gates; P-i-n diodes; Radiative recombination; Silicon; Carrier injectors; Electroluminescence; Elemental semiconductors; FinFETs; Infrared light sources; Integrated optics; LED; Light emitting diodes; Nanometric devices; Near-infrared light emission; Silicon; Silicon Photonics; Silicon on insulator technology; p-i-n diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948813

Filename

6948813