Barium titanate and its use as a memory store

The use of barium titanate single crystals for memory matrices is considered. It is shown that the discrimination between read-out ¿one¿ and read-out ¿zero¿ on a matrix is reasonably high and that the response times and current flows involved compare reasonably with other types of store. However the lack of definite coercive field and heating effects limit the minimum access time of such a store to 10 ¿sec. The energy dissipation per bit is shown to be slightly less than for a ferrite, and there will be a further energy gain over ferrite stores due to the low current flows involved. Transistor drive circuits can be used with such stores due to the low currents. The over-all size of a store is small and the maximum number of digits that can be stored is shown to be limited by the growing of suitable crystals.