DocumentCode :
146105
Title :
Analog SiPM in planar CMOS technology
Author :
Villa, Federica ; Bronzi, Danilo ; Vergani, Michele ; Yu Zou ; Ruggeri, Alfredo ; Zappa, Franco ; Dalla Mora, Alberto
Author_Institution :
Dipt. di Elettron., Inf. e Bioingegneria, Milan, Italy
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
294
Lastpage :
297
Abstract :
Silicon Photomultipliers (SiPMs) are emerging single photon detectors used in many applications requiring large active area, photon number resolving capability and immunity to magnetic fields. We developed planar analog SiPMs in a reliable and cost-effective CMOS technology with a total photosensitive area of about 1×1 mm2. Three devices with different active areas, and fill-factor (21%, 58.3%, 73.7%), have been characterized. The maximum photon detection efficiency is in the near-UV and tops at 38% (fill-factor included), with a dark count rate of 125 kcps. Gain and crosstalk depend on the active area size and are comparable to those of commercial best-in-class custom-technology SiPMs. However our full CMOS processing enables advanced SiPM single-chip systems where transistors and further on chip electronics can be integrated together with the detectors.
Keywords :
CMOS analogue integrated circuits; crosstalk; elemental semiconductors; magnetic fields; photomultipliers; silicon; Si; active areas; advanced single-chip systems; analog SiPM; cost-effective CMOS technology; crosstalk; fill-factor; magnetic fields; maximum photon detection efficiency; near-UV; photon number; photosensitive area; planar CMOS technology; silicon photomultipliers; single photon detectors; Anodes; CMOS integrated circuits; CMOS technology; Capacitance; Detectors; Microcell networks; Photonics; CMOS technology; Positron Emission Tomogaphy (PET); Silicon Photomultiplier (SiPM); large active area; photon number resolving detector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948818
Filename :
6948818
Link To Document :
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