Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

Author

Di Lecce, Valerio ; Grassi, Roberto ; Gnudi, A. ; Gnani, Elena ; Reggiani, S. ; Baccarani, G.

Author_Institution

E. De Castro Adv. Res. Center on Electron. Syst. (ARCES), Univ. of Bologna, Bologna, Italy

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

313

Lastpage

316

Abstract

The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.

Keywords

Poisson equation; crystal orientation; elemental semiconductors; field effect transistors; graphene; impurity scattering; silicon; submillimetre wave transistors; terahertz wave devices; GBHTs; Poisson equation; Si-C; crystallographic orientation; impurity scattering effect; in-house developed simulator; quantum transport; silicon-based graphene-base heterojunction transistors; terahertz operation; Cutoff frequency; Graphene; Heterojunctions; Impurities; Scattering; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948823

Filename

6948823