Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation

Predictive TCAD tool is crucial for several reasons such as to provide pre-silicon data, shorten the technology development cycle and reduce the fabrication cost. In this paper, advanced 3D TCAD process and device simulations is used to gain physical understanding and to optimize the performance/variability of bulk-FinFETs. For the first time, the full FinFET process flow simulation was performed using diffusion, activation and segregation models identical to those used in planar nodes. In this work a wide range of implantation and anneal splits is used to demonstrate the 3D simulation accuracy. After achieving good agreement with experiments in terms of Vth and Ion/Ioff, considering lateral dopant diffusion and activation, the simulation was used to investigate SRAM random doping fluctuation RDF.