High-power VCSEL arrays for emission in the watt regime at room temperature

Author

Miller, M. ; Grabherr, M. ; Jager, R. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

13

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

173

Lastpage

175

Abstract

Selectively oxidized InGaAs vertical-cavity surface emitting lasers (VCSELs) at an emission wavelength of /spl lambda/=980 mm are investigated for high-power applications. Densely packed arrays consisting of 19 single devices with an active diameter of 50 μm emit 1.08 W of continuous-wave (CW) optical output power at room temperature. At 10/spl deg/C, heat sink temperature the output power increases to 1.4 W, which corresponds to a chip size averaged power density of 1 kW/spl middot/cm². Low divergence angle of less than 16/spl deg/ full-width at half-maximum (FWHM) and the circularly symmetric far-field pattern allow for simple focusing of the beam with power densities above 10 kW/spl middot/cm².

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor device packaging; semiconductor laser arrays; surface emitting lasers; 1.08 W; 10 C; 50 mum; 980 nm; InGaAs; InGaAs vertical-cavity surface emitting lasers; active diameter; chip size averaged power density; circularly symmetric far-field pattern; densely packed arrays; emission wavelength; focusing; high-power VCSEL arrays; low divergence angle; output power; power densities; room temperature; selectively oxidized; watt regime; Indium gallium arsenide; Optical arrays; Optical devices; Optical surface waves; Power generation; Stimulated emission; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.914311

Filename

914311