RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond

Author

Hirama, Kazuyuki ; Kasu, Makoto ; Taniyasu, Yoshitaka

Author_Institution

NTT Basic Res. Labs., NTT Corp., Atsugi, Japan

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

513

Lastpage

515

Abstract

We epitaxially grow AlGaN/GaN high-electron-mobility transistors (HEMTs) on IIa-type single-crystal diamond (111) substrates. A 0.4-μm gate-length HEMT showed a dc drain-current density I_DS of 770 mA/mm and a breakdown voltage of 165 V. In the RF large-signal measurements at 1 GHz, an RF output-power density P_OUT of 2.13 W/mm was obtained. This is the first report of RF power operation of AlGaN/GaN HEMTs epitaxially grown on diamond. The AlGaN/GaN HEMTs epitaxially grown on diamond showed a low thermal resistance of 1.5 K·mm/W.

Keywords

aluminium compounds; current density; epitaxial growth; gallium compounds; high electron mobility transistors; radiofrequency measurement; semiconductor device breakdown; semiconductor device measurement; thermal resistance; wide band gap semiconductors; AlGaN-GaN; IIa-type single-crystal diamond substrates; RF high-power operation; RF large-signal measurements; RF output power density; RF power operation; breakdown voltage; dc drain current density; epitaxial growth; gate-length HEMT; high electron mobility transistors; size 0.4 mum; thermal resistance; Aluminum gallium nitride; Diamond-like carbon; Epitaxial growth; Gallium nitride; HEMTs; MODFETs; Substrates; AlGaN/GaN high-electron-mobility transistors; RF large-signal measurements; diamond;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2185678

Filename

6163339