Title :
Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Author :
Moschetti, Giuseppe ; Nilsson, Per-Åke ; Hallén, Anders ; Desplanque, Ludovic ; Wallart, Xavier ; Grahn, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
4/1/2012 12:00:00 AM
Abstract :
The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 ×1015 cm-2 in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an fT/fmax ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.
Keywords :
aluminium compounds; circuit stability; high electron mobility transistors; indium compounds; ion implantation; isolation technology; millimetre wave field effect transistors; InAs-AlSb; device isolation; electron volt energy 100 keV; frequency 180 GHz; frequency 210 GHz; high device isolation; high-electron-mobility transistors; ion-implantation isolation technology; oxidation; planar HEMT; ultralow-power MMIC; voltage 0.3 V; Annealing; Fabrication; HEMTs; MODFETs; Oxidation; Performance evaluation; Thermal stability; InAs/AlSb high-electron-mobility transistor; MMIC; ion implantation; low power;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2185480
