Planar InAs/AlSb HEMTs With Ion-Implanted Isolation

Author

Moschetti, Giuseppe ; Nilsson, Per-Åke ; Hallén, Anders ; Desplanque, Ludovic ; Wallart, Xavier ; Grahn, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

510

Lastpage

512

Abstract

The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 ×10¹⁵ cm^-2 in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an f_T/f_max ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.

Keywords

aluminium compounds; circuit stability; high electron mobility transistors; indium compounds; ion implantation; isolation technology; millimetre wave field effect transistors; InAs-AlSb; device isolation; electron volt energy 100 keV; frequency 180 GHz; frequency 210 GHz; high device isolation; high-electron-mobility transistors; ion-implantation isolation technology; oxidation; planar HEMT; ultralow-power MMIC; voltage 0.3 V; Annealing; Fabrication; HEMTs; MODFETs; Oxidation; Performance evaluation; Thermal stability; InAs/AlSb high-electron-mobility transistor; MMIC; ion implantation; low power;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2185480

Filename

6163342