DocumentCode :
146139
Title :
Impact of Off State Stress on advanced high-K metal gate NMOSFETs
Author :
Spessot, A. ; Aoulaiche, Marc ; Moonju Cho ; Franco, Jacopo ; Schram, T. ; Ritzenthaler, R. ; Kaczer, Ben
Author_Institution :
Micron Technol. Belgium, Leuven, Belgium
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
365
Lastpage :
368
Abstract :
In this work we have investigated the impact of Off State Stress (OSS) on nMOSFETs in High-K/Metal Gate (HKMG) technology. Although in standard poly-SiO2/SiON devices the impact of OSS is relatively limited and causes an increase in VTH, in the case of HKMG larger degradation is observed, with negative VTH shift. A significant increase of the device Off state leakage is observed, causing a serious issue for high voltage and low power oriented circuits.
Keywords :
MOSFET; high-k dielectric thin films; low-power electronics; semiconductor device reliability; silicon compounds; SiO2-SiON; high-K metal gate NMOSFET; low power oriented circuits; off state leakage; off state stress; voltage threshold shift; Degradation; High K dielectric materials; Impact ionization; Logic gates; MOSFET; Metals; Stress; HKMG; MOSFETs; Off State Stress; Semiconductor device reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948836
Filename :
6948836
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=146139
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