• DocumentCode
    146139
  • Title

    Impact of Off State Stress on advanced high-K metal gate NMOSFETs

  • Author

    Spessot, A. ; Aoulaiche, Marc ; Moonju Cho ; Franco, Jacopo ; Schram, T. ; Ritzenthaler, R. ; Kaczer, Ben

  • Author_Institution
    Micron Technol. Belgium, Leuven, Belgium
  • fYear
    2014
  • fDate
    22-26 Sept. 2014
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    In this work we have investigated the impact of Off State Stress (OSS) on nMOSFETs in High-K/Metal Gate (HKMG) technology. Although in standard poly-SiO2/SiON devices the impact of OSS is relatively limited and causes an increase in VTH, in the case of HKMG larger degradation is observed, with negative VTH shift. A significant increase of the device Off state leakage is observed, causing a serious issue for high voltage and low power oriented circuits.
  • Keywords
    MOSFET; high-k dielectric thin films; low-power electronics; semiconductor device reliability; silicon compounds; SiO2-SiON; high-K metal gate NMOSFET; low power oriented circuits; off state leakage; off state stress; voltage threshold shift; Degradation; High K dielectric materials; Impact ionization; Logic gates; MOSFET; Metals; Stress; HKMG; MOSFETs; Off State Stress; Semiconductor device reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2014 44th European
  • Conference_Location
    Venice
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4799-4378-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2014.6948836
  • Filename
    6948836
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=146139