DocumentCode :
1461396
Title :
Author :
Liu, Han ; Ye, Peide D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
33
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
546
Lastpage :
548
Abstract :
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C- V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at Vds = 2 V with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm2/V·s. The highest current on/off ratio is over 108.
Keywords :
MOSFET; alumina; atomic layer deposition; electron mobility; high-k dielectric thin films; molybdenum compounds; semiconductor device measurement; 2D layer-structured molybdenum disulfide crystals; ALD; Al2O3; MOSFET structures; MoS2; atomic-layer-deposited high-k dielectric integration; atomic-layer-deposition; back gates; back-gate control; channel length; channel width; drain currents; dual-gate MOSFET; dual-gate n-channel MOSFET; field-effect mobility; top gates; top-gate dielectric; top-gate length; Aluminum oxide; Atomic layer deposition; Crystals; Dielectrics; Logic gates; MOSFET circuits; $hbox{MoS}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2184520
Filename :
6163344
Link To Document :
