DocumentCode :
1461471
Title :
Magnetic ground state of a thin-film element
Author :
Rave, Wolfgang ; Hubert, Alex
Author_Institution :
Inst. fur Festkorper und Werkstofforschung, Tech. Univ. Dresden, Germany
Volume :
36
Issue :
6
fYear :
2000
fDate :
11/1/2000 12:00:00 AM
Firstpage :
3886
Lastpage :
3899
Abstract :
By means of three-dimensional numerical calculations we studied possible micromagnetic configurations in a rectangular Permalloy-like thin-film element. The parameters were chosen to be compatible with the so-called micromagnetic standard problem 1. We demonstrate that for these parameters a diamond domain pattern is the lowest energy state that replaces cross-tie patterns favorable in larger elements. Only at smaller sizes does the originally envisaged Landau pattern form the ground state. The transition to high-remanence structures (or what would be comparable to a “single-domain” state) is found for lateral sizes that are an order of magnitude smaller than the benchmark parameters. The transitions among the different domain patterns become plausible in view of the energy of symmetric Neel walls in extended thin films. The features of the high-remanence structures can be derived from the principle of uniform charge distribution
Keywords :
Permalloy; fast Fourier transforms; ferromagnetic materials; ground states; magnetic domain walls; magnetic domains; magnetic thin film devices; magnetic thin films; remanence; FFT technique; Landau pattern; diamond domain pattern; domain patterns; high-remanence structures; magnetic ground state; magnetization patterns; micromagnetic configurations; micromagnetic standard problem 1; rectangular Permalloy-like thin-film element; single-domain state; symmetric Neel walls; three-dimensional numerical calculations; uniform charge distribution; Anisotropic magnetoresistance; Energy states; Equations; Magnetic anisotropy; Magnetic films; Micromagnetics; NIST; Perpendicular magnetic anisotropy; Stationary state; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.914337
Filename :
914337
Link To Document :
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