DocumentCode
1461525
Title
Failure Rates for Interconnect Dielectric Breakdown: Trends Determining Technology Reliability Scaling Limits
Author
Achanta, Ravi ; McLaughlin, Paul ; Chen, Fen
Author_Institution
IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
Volume
11
Issue
2
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
273
Lastpage
277
Abstract
In this paper, the dielectric properties [dielectric constant κ and thickness d (in nanometers)] that are necessary for the reliable operation of interline dielectrics used for passivation of copper interconnects in integrated circuits are determined. By relating the field acceleration factor to the dielectric constant, the optimum dielectric properties needed for meeting industrial reliability targets are estimated. This fundamental analysis offers a method of rationally introducing new materials to meet technology performance goals while maintaining reliability targets.
Keywords
copper; electric breakdown; integrated circuit interconnections; integrated circuit reliability; permittivity; copper interconnects; dielectric constant; dielectric thickness; failure rates; interconnect dielectric breakdown; reliability scaling limits; Acceleration; Dielectric constant; Electric breakdown; Integrated circuit reliability; Materials; Copper interconnects; interline dielectric (ILD) breakdown; material reliability; technology scaling;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2011.2121067
Filename
5721797
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