• DocumentCode
    1461525
  • Title

    Failure Rates for Interconnect Dielectric Breakdown: Trends Determining Technology Reliability Scaling Limits

  • Author

    Achanta, Ravi ; McLaughlin, Paul ; Chen, Fen

  • Author_Institution
    IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
  • Volume
    11
  • Issue
    2
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    273
  • Lastpage
    277
  • Abstract
    In this paper, the dielectric properties [dielectric constant κ and thickness d (in nanometers)] that are necessary for the reliable operation of interline dielectrics used for passivation of copper interconnects in integrated circuits are determined. By relating the field acceleration factor to the dielectric constant, the optimum dielectric properties needed for meeting industrial reliability targets are estimated. This fundamental analysis offers a method of rationally introducing new materials to meet technology performance goals while maintaining reliability targets.
  • Keywords
    copper; electric breakdown; integrated circuit interconnections; integrated circuit reliability; permittivity; copper interconnects; dielectric constant; dielectric thickness; failure rates; interconnect dielectric breakdown; reliability scaling limits; Acceleration; Dielectric constant; Electric breakdown; Integrated circuit reliability; Materials; Copper interconnects; interline dielectric (ILD) breakdown; material reliability; technology scaling;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2011.2121067
  • Filename
    5721797