DocumentCode :
1461559
Title :
Investigation on the Exchange Coupling Properties of Ring-Shaped MnIr/CoFe Bilayers
Author :
Chen, C.C. ; Shiao, M.H. ; Lin, Y.C. ; Tsai, H.M. ; Kuo, C.Y. ; Horng, Lance ; Wu, J.C. ; Isogami, S. ; Tsunoda, M. ; Takahashi, M.
Author_Institution :
Instrum. Technol. Res. Center, Nat. Appl. Res. Labs., Hsinchu, Taiwan
Volume :
47
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
620
Lastpage :
623
Abstract :
In this study, the exchange coupling properties of submicron patterned Mnlr/CoFe bilayers with strong exchange coupling strength were investigated. The large area of 2.5 mm × 2.5 mm of submicron sized bilayer rings were fabricated by electron beam lithography and ion-milling processes. The clear variations of normalized magnetic hysteresis loops of patterned films are the degradation of pinned CoFe at the Mnlr/CoFe interfaces and the decrease of exchange bias field, comparing with sheet film. After post-field-annealing treatment, only the exchange field was improved. A magnetic tunnel junction ring with outer diameter/linewidth of 2/0.5 μm was constructed as well to further certify the speculations. The magnetoresistance loops of as-fabricated and post-field annealed MTJ ring revealed that the slightly improved magnetoresistance ratio and exchange field. These results were attributed to the rearrangement of distorted spins at the sample edges. However, in comparison with sheet film, the great degradation of magnetoresistance ratio of patterned device, without respect to as-fabricated or post-field annealed, was not retrieved, revealing that the futility of post-field-annealing treatment to the pinning portion of CoFe layer.
Keywords :
annealing; cobalt alloys; distortion; electron beam lithography; ferromagnetic materials; ion beam effects; iridium alloys; iron alloys; magnetic hysteresis; magnetic multilayers; magnetic structure; magnetic tunnelling; magnetoresistance; manganese alloys; milling; MnIr-CoFe; distorted spin rearrangement; electron beam lithography; exchange bias field; exchange coupling strength; ferromagnetic materials; ion-milling process; magnetic hysteresis loops; magnetic tunnel junction ring; magnetoresistance loops; post-field-annealing; size 0.5 mum; size 2 mum; submicron patterned ring-shaped bilayers; Couplings; Magnetic hysteresis; Magnetic multilayers; Magnetic tunneling; Magnetoresistance; Perpendicular magnetic anisotropy; Alternating gradient magnetometer; exchange coupling; magnetic hysteresis; rings;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2010.2100370
Filename :
5721802
Link To Document :
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