Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs

Author

Umana-Membreno, G.A. ; Chang, S.-J. ; Bawedin, M. ; Antoszewski, J. ; Cristoloveanu, S. ; Faraone, L.

Author_Institution

Sch. of E.E.&C. Eng., Univ. of Western Australia, Crawley, WA, Australia

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

409

Lastpage

412

Abstract

High-resolution mobility spectrum analysis has been employed to study the magnetic-field dependent geometrical magnetoresistance characteristics of planar FD-SOI MOSFETs with 10 nm thick transistor channel layer. It is shown that transport in the Si channel is due to two well-defined electron species. According to self-consistent Poisson-Schrdinger calculations, these species correspond to carriers in two distinct subbands within the Si channel region which arise from strong carrier confinement and volume inversion. The mobility peak of the first sub-band was found to occur under gate bias conditions that result in a minimum perpendicular effective electric field.

Keywords

MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; magnetic fields; magnetoresistance; silicon-on-insulator; Si; carrier confinement; fully-depleted MOSFETs; gate bias conditions; geometrical magnetoresistance; magnetic-field; mobility spectrum analysis; perpendicular effective electric field; planar FD-SOI MOSFETs; self-consistent Poisson-Schrodinger calculations; silicon channel region; size 10 nm; transistor channel layer; volume inversion; well-defined electron species; Logic gates; MOSFET; Magnetic analysis; Magnetoresistance; Silicon; Spectral analysis; FD-SOI; Hall-effect; MOSFET; magnetoresistance; mobility; mobility spectrum analysis; volume inversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948847

Filename

6948847