Title :
Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs
Author :
Umana-Membreno, G.A. ; Chang, S.-J. ; Bawedin, M. ; Antoszewski, J. ; Cristoloveanu, S. ; Faraone, L.
Author_Institution :
Sch. of E.E.&C. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
High-resolution mobility spectrum analysis has been employed to study the magnetic-field dependent geometrical magnetoresistance characteristics of planar FD-SOI MOSFETs with 10 nm thick transistor channel layer. It is shown that transport in the Si channel is due to two well-defined electron species. According to self-consistent Poisson-Schrdinger calculations, these species correspond to carriers in two distinct subbands within the Si channel region which arise from strong carrier confinement and volume inversion. The mobility peak of the first sub-band was found to occur under gate bias conditions that result in a minimum perpendicular effective electric field.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; magnetic fields; magnetoresistance; silicon-on-insulator; Si; carrier confinement; fully-depleted MOSFETs; gate bias conditions; geometrical magnetoresistance; magnetic-field; mobility spectrum analysis; perpendicular effective electric field; planar FD-SOI MOSFETs; self-consistent Poisson-Schrodinger calculations; silicon channel region; size 10 nm; transistor channel layer; volume inversion; well-defined electron species; Logic gates; MOSFET; Magnetic analysis; Magnetoresistance; Silicon; Spectral analysis; FD-SOI; Hall-effect; MOSFET; magnetoresistance; mobility; mobility spectrum analysis; volume inversion;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948847
