DocumentCode :
146160
Title :
Temperature dependence of threshold voltage fluctuations in CMOS transistors incorporating halo implant
Author :
Edwards, Hal ; Niu Jin ; Fan-Chi Hou ; Choi, Li Jen ; Krakowski, Tracey ; Joardar, Kuntal
Author_Institution :
Texas Instrum., Inc., Dallas, TX, USA
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
413
Lastpage :
416
Abstract :
We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. A bias method is presented and shown to recover part of the matching degradation due to the halo implant.
Keywords :
CMOS analogue integrated circuits; integrated circuit modelling; ion implantation; semiconductor doping; CMOS VT mismatch; CMOS transistors; bias method; compact model; device physics theory; halo implant; temperature dependence; threshold voltage fluctuations; threshold voltage mismatch; CMOS integrated circuits; Doping; Implants; Mathematical model; Semiconductor device modeling; Threshold voltage; Transistors; CMOS analog integrated circuits; Differential amplifiers; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948848
Filename :
6948848
Link To Document :
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