Performance Evaluation of 3.3-kV Planar CIGBT in the NPT Technology With RTA Anode

Author

Balachandran, A. ; Sweet, M.R. ; Luther-King, N. ; Narayanan, E. M Sankara ; Ray, Shona ; Quaresma, Henrique ; Bruce, John

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

Volume

59

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1439

Lastpage

1444

Abstract

In this paper, we report the experimental results of a 3.3-kV-rated clustered insulated gate bipolar transistor (CIGBT) with planar gates in nonpunchthrough technology (NPT) and rapid thermal annealing (RTA) anode. Previously, it had been shown that, for identical turn-off losses, the on -state voltage of the 3.3-kV CIGBT is more than 0.7 V lower than that of an equivalent IGBT. Herein, we show that, due to the low saturation current density, the CIGBT has a rugged short-circuit performance of more than 10 μs even at 125 ^°C. Furthermore, results also show that the use of the RTA anode, as compared with, the diffused anode helps in reducing the turn-off losses by about 50% without affecting the V_ce(sat) value of the device.

Keywords

annealing; insulated gate bipolar transistors; performance evaluation; power bipolar transistors; NPT technology; ON-state voltage; RTA anode; clustered insulated gate bipolar transistor; identical turn-off losses; nonpunchthrough technology; performance evaluation; planar CIGBT; planar gates; rapid thermal annealing anode; rugged short-circuit performance; temperature 125 degC; voltage 3.3 kV; Anodes; Cathodes; Implants; Insulated gate bipolar transistors; Logic gates; Performance evaluation; Thyristors; Bipolar transistors; clustered insulated gate bipolar transistor (CIGBT); insulated gate bipolar transistor (IGBT); power semiconductor devices; rapid thermal annealing (RTA); thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2186967

Filename

6163378