• DocumentCode
    1461702
  • Title

    Magnetization reversal processes in exchange-biased spin-valve structures

  • Author

    Goodman, A.M. ; O´Grady, K. ; Laidler, H. ; Owen, N.W. ; Portier, X. ; Petford-Long, A.K. ; Cebollada, F.

  • Author_Institution
    Magnetic Mater. Res. Group, Univ. of Wales, Bangor, UK
  • Volume
    37
  • Issue
    1
  • fYear
    2001
  • fDate
    1/1/2001 12:00:00 AM
  • Firstpage
    565
  • Lastpage
    570
  • Abstract
    In this paper we provide an initial, qualitative description of the basic magnetization reversal processes that occur when a soft ferromagnetic layer is coupled to an antiferromagnet. We find that the magnetization reversal in the ferromagnetic layer adjacent to the antiferromagnet, i.e., the pinned layer, is dominated by thermal activation processes, We have developed, and report here, a model that accounts for seven distinct features of the magnetization curve of the pinned layer. The model is based upon the formation of domains in the antiferromagnetic layer whose growth is dominated by thermal activation processes. The thermal activation of these domain processes can result in shifts of the hysteresis loop in either direction, depending on the magnetic history of the sample and the rate of field sweep, In consequence, we call into question the current definition of the exchange field Hex typically used to characterize such systems
  • Keywords
    antiferromagnetism; exchange interactions (electron); magnetic hysteresis; magnetic multilayers; magnetisation reversal; soft magnetic materials; spin valves; antiferromagnet; antiferromagnetic layer; exchange field; exchange-biased spin-valve structures; field sweep; hysteresis loop; magnetic history; magnetization curve; magnetization reversal processes; pinned layer; soft ferromagnetic layer; thermal activation processes; Anisotropic magnetoresistance; Antiferromagnetic materials; Couplings; Energy barrier; Magnetic anisotropy; Magnetic hysteresis; Magnetic materials; Magnetization reversal; Production; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.914379
  • Filename
    914379