Title :
Floating-Gate Coupling Canceller for Multi-Level Cell NAND Flash
Author :
Park, Donghyuk ; Lee, Jaejin
Author_Institution :
Sch. of Electr. Eng., Soongsil Univ., Seoul, South Korea
fDate :
3/1/2011 12:00:00 AM
Abstract :
Floating-gate coupling occurs due to voltage changes in neighboring floating-gates. Coupling noise is difficult to overcome because of its non-linear property. We propose a coupling canceller for cancelling the coupling effect in multi-level cell NAND flash memory, and compare its performance with threshold detection. Simulation results show that the proposed floating-gate coupling canceller is an effective scheme for suppressing coupling noise.
Keywords :
NAND circuits; circuit noise; flash memories; coupling noise; floating-gate coupling canceller; multilevel cell NAND flash memory; threshold detection; Ash; Couplings; Flash memory; Noise; Nonvolatile memory; Programming; Voltage control; Coupling noise; floating-gate coupling canceller (FG CC); multi-level cell (MLC) NAND flash memory;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2101054
