• DocumentCode
    1461782
  • Title

    Floating-Gate Coupling Canceller for Multi-Level Cell NAND Flash

  • Author

    Park, Donghyuk ; Lee, Jaejin

  • Author_Institution
    Sch. of Electr. Eng., Soongsil Univ., Seoul, South Korea
  • Volume
    47
  • Issue
    3
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    624
  • Lastpage
    628
  • Abstract
    Floating-gate coupling occurs due to voltage changes in neighboring floating-gates. Coupling noise is difficult to overcome because of its non-linear property. We propose a coupling canceller for cancelling the coupling effect in multi-level cell NAND flash memory, and compare its performance with threshold detection. Simulation results show that the proposed floating-gate coupling canceller is an effective scheme for suppressing coupling noise.
  • Keywords
    NAND circuits; circuit noise; flash memories; coupling noise; floating-gate coupling canceller; multilevel cell NAND flash memory; threshold detection; Ash; Couplings; Flash memory; Noise; Nonvolatile memory; Programming; Voltage control; Coupling noise; floating-gate coupling canceller (FG CC); multi-level cell (MLC) NAND flash memory;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2010.2101054
  • Filename
    5721833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1461782