• DocumentCode
    1461821
  • Title

    Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation

  • Author

    Zanuccoli, Mauro ; De Rose, Raffaele ; Magnone, Paolo ; Sangiorgi, Enrico ; Fiegna, Claudio

  • Author_Institution
    ARCES-DEIS, Univ. of Bologna, Cesena, Italy
  • Volume
    59
  • Issue
    5
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    1311
  • Lastpage
    1319
  • Abstract
    The adoption of local point contacts at the back surface of high-efficiency monocrystalline silicon solar cells is strategic in order to reduce the recombination losses at the rear side of the device. However, the reduction of the rear-contact surface leads to an increase of series resistance losses. In this paper, we present an extensive analysis based on 3-D optoelectronic numerical device simulations in order to highlight the dependence of the conversion efficiency on the main geometrical and technological parameters of the cell, such as the pitch and the size of the rear point contacts and the substrate resistivity. A state-of-the-art device simulator has been successfully adopted in order to accurately solve the transport equations in the semiconductor by taking into account all the loss mechanisms that are crucial in order to address the design of the cell.
  • Keywords
    numerical analysis; solar cells; 3D optoelectronic numerical device simulations; geometrical parameters; high-efficiency monocrystalline silicon solar cells; rear point contact solar cells; rear-contact surface; recombination loss reduction; series resistance losses; substrate resistivity; technological parameters; three-dimensional numerical simulation; transport equations; Conductivity; Doping; Metallization; Photovoltaic cells; Resistance; Semiconductor process modeling; Substrates; 3-D numerical simulation; Passivated emitter and rear cell (PERC); passivated emitter, rear locally diffused (PERL); rear point contact; solar cell;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2187297
  • Filename
    6163404