Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Author

Cho, Yong-Sang ; Choi, Woo-Young

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

Volume

37

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

574

Lastpage

579

Abstract

Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided

Keywords

light polarisation; quantum well lasers; semiconductor optical amplifiers; valence bands; SOA; SOA signal gains; TE optical gain spectra; TM optical gain spectra; delta-strained quantum wells; optimization; polarization dependence; polarization sensitivity; polarization-insensitive semiconductor optical amplifiers; valence band structures; Fiber nonlinear optics; Nonlinear optics; Optical mixing; Optical polarization; Optical sensors; Optical signal processing; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission; Tellurium;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.914407

Filename

914407