Title :
Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films
Author :
Lin, Chun-Chieh ; Chang, Yi-Peng ; Ho, Chia-Cheng ; Shen, Yu-Shu ; Chiou, Bi-Shiou
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
fDate :
3/1/2011 12:00:00 AM
Abstract :
A novel material CaCu3Ti4O12 (CCTO) for resistive random access memory (RRAM) application was prepared by sol-gel spin coating method. Our previous studies indicated that the CCTO possesses stable resistive switching behavior. In this work, the effects of the top electrode (TE) material on the resistive switching characteristics of CCTO films are investigated. It indicates the work function of the TE is an important factor on the resistive switching properties. Successive resistive switching was observed for electrode materials of Ni, Pd, and Pt. Furthermore, optimized consideration of the electrode material for RRAM is also studied.
Keywords :
calcium compounds; copper compounds; electrodes; magnetic switching; magnetic thin films; sol-gel processing; spin coating; work function; CaCu3Ti4O12; nonvolatile resistive switching properties; resistive random access memory; sol-gel spin-coating method; top electrode material; work function; Copper; Electrodes; Nickel; Nonvolatile memory; Silicon; Switches; Electrodes; nonvolatile memory; resistive random access memory; work function;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2101584
