Title :
Phase Change Memory and Breakthrough Technologies
Author_Institution :
Ovonic Phase Change Inst., Nara, Japan
fDate :
3/1/2011 12:00:00 AM
Abstract :
Phase change memory has had issues of overwrite cycle, erase speed, and sensitivity characteristics. We found key technologies and resolved these issues. In this paper, we discuss sensitivity of phase change material, of the conventional optical disc, of femtosecond laser response, and of electrical switching of PRAM. This sensitivity comparison suggests two kinds of phase change process capability: thermal long-range structure change and localized short-range structure change.
Keywords :
concurrency theory; optical disc storage; phase change materials; phase change memories; PRAM electrical switching; erase speed; femtosecond laser response; localized short-range structure change; optical disc; overwrite cycle; phase change material sensitivity; phase change memory; sensitivity characteristics; thermal long-range structure change; Optical imaging; Optical pulses; Optical recording; Optical sensors; Phase change random access memory; Sensitivity; Ultrafast optics; Femtosecond laser pulse; NVM; OMS; OTS; PRAM; optical disc; order-disorder structure change; phase change; sensitivity;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2011.2107033
