Investigation of changes in absorber position in the 650 nm AlGaInP self-pulsating laser for optical storage applications

Author

Jones, D.R. ; Rees, P. ; Pierce, I. ; Summers, H.D.

Author_Institution

Sch. of Inf., Univ. of Wales, Bangor, UK

Volume

148

Issue

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

65

Lastpage

68

Abstract

Self-pulsating laser diodes operating at 650 nm are required in high-density optical storage devices. By growing saturable absorbing quantum wells in the p-doped cladding layer of a laser it is possible to obtain the interplay between gain and absorption that is required for pulsation. A self-pulsating AlGaInP laser is modelled in order to gain an insight into how the distance between the active and absorber layers affects the laser output. Results indicate that the device performance can be altered significantly as the distance changes, showing that this design feature is a key parameter for optimum performance

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beam applications; laser beams; optical disc storage; optical saturable absorption; quantum well lasers; 650 nm; AlGaInP; AlGaInP self-pulsating laser; AlGaInP-GaInP; absorber layers; absorber position; absorption; active layers; design feature; device performance; gain; high-density optical storage devices; key parameter; laser output; optical storage applications; optimum performance; p-doped cladding layer; pulsation; saturable absorbing quantum wells; self-pulsating laser; self-pulsating laser diodes;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20010103

Filename

914426