A systematic methodology to design high power terahertz and submillimeter-wave amplifiers

This paper presents a novel design methodology for high power terahertz and submillimeter wave CMOS amplifiers. This approach is a microwave-based method, commonly used for designing amplifiers with operation frequencies close to maximum oscillation frequency (f_max) of the transistors. This approach calculates the optimum conditions by monitoring active region of the devices in order to attain maximum accessible transistor power gain (G_acc). Limitations of existing methods and improvements upon them are investigated through both theory and simulation. Finally, a 100 GHz single-stage high-power submillimeter wave amplifier with a gain of 3.75 dB is designed and simulated in 130nm CMOS technology using the proposed microwave approach.