A Comprehensive LER-Aware TDDB Lifetime Model for Advanced Cu Interconnects

Author

Stucchi, Michele ; Roussel, Philippe J. ; Tökei, Zsolt ; Demuynck, Steven ; Groeseneken, Guido

Author_Institution

IMEC, Leuven, Belgium

Volume

11

Issue

2

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

278

Lastpage

289

Abstract

A time-dependent dielectric breakdown (TDDB) lifetime model predicting the impact of line-edge roughness (LER) on Cu interconnect reliability is proposed. The structure, validity, and accuracy of the model are evaluated and discussed. The model is applied to an interconnect scaling scenario that includes conventional patterning and spacer-defined patterning of nanometer-scale Cu wires. LER-aware TDDB lifetime predictions are obtained from the model, and consequent recommendations on how to improve the TDDB lifetime of future interconnects are derived.

Keywords

copper; electric breakdown; integrated circuit interconnections; integrated circuit reliability; nanowires; Cu; copper interconnects; interconnect scaling; line-edge roughness; nanometer-scale wires; reliability; spacer-defined patterning; time-dependent dielectric breakdown lifetime model; Approximation methods; Copper; Dielectrics; Fitting; Predictive models; Reliability; Wires; Cu interconnects; lifetime prediction; line-edge roughness (LER); time-dependent dielectric breakdown (TDDB);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2011.2121909

Filename

5722027