Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters

Author

Heller, Eric R. ; Vetury, Rama ; Green, Daniel S.

Author_Institution

Mater. Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA

Volume

58

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

1091

Lastpage

1095

Abstract

We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported.

Keywords

III-V semiconductors; aluminium compounds; calibration; finite element analysis; gallium compounds; high electron mobility transistors; semiconductor device measurement; semiconductor device models; transmission electron microscopy; wide band gap semiconductors; AlGaN-GaN; HEMT; calibration; epitaxy variation; field-effect transistor; multiple DC parameter; physics-based finite-element model; transmission electron microscope cross-section; Aluminum gallium nitride; Data models; Gallium nitride; HEMTs; Logic gates; Mathematical model; Semiconductor device modeling; Device model; GaN; GaN/AlGaN; field-effect transistor (FET); high-electron mobility transistor (HEMT); model calibration; model characterization; modulation-doped field effect transistor (MODFET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2107913

Filename

5722029