DocumentCode :
1462345
Title :
High-Quality 
Nanolaminates on p-GaN MOS Capacitor
Author :
Lee, Ko-Tao ; Huang, Chih-Fang ; Gong, Jeng
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
31
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
558
Lastpage :
560
Abstract :
In this letter, the electrical characteristics of nanolaminate MgO/TiO2/MgO on a p-GaN MOS capacitor with and without postmetallization annealing (PMA) and (NH4)2Sx, treatments are investigated. With both PMA and (NH4)2Sx, treatments, the leakage current densities are reduced to 3.9 × 10-8 and 3.7 × 10-8 A/cm2 at ±1 V, respectively. With a much-improved C-V curve, the effective dielectric constant of the gate dielectric stack for both treatments is 17.8, and an averaged interface trap density of 3.1 × 1011 eV-1 cm-2 is obtained.
Keywords :
MOS capacitors; gallium compounds; laminates; leakage currents; magnesium compounds; titanium compounds; (NH4)2S; C-V curve; GaN; MgO-TiO2-MgO; averaged interface trap density; electrical characteristics; gate dielectric stack; high-quality nanolaminates; leakage current density; p-GaN MOS Capacitor; postmetallization annealing; $(hbox{NH}_{4})_{2} hbox{S}_{x}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2045101
Filename :
5443462
Link To Document :
