Multichannel Tunneling Carbon Nanotube Field Effect Transistor (MT-CNTFET)

Tunnel Field Effect Transistor (TFET) based on Band-to-Band tunneling mechanism is a revolutionary device technology that has a very strong potential to break the thermodynamic barrier of conventional FETs and provide a very steep subthreshold slope. TFETs would also allow further reduction of channel length to extend the Moore´s law. TFETs in general suffer from low ON-state current (I_ON). In this paper, we propose a new TFET structure to increase the drain to source current of the tunneling devices. The design is based on single-walled carbon nanotubes (SWCNTs). The idea is to provide multiple SWCNTs as tunneling path. We demonstrated the concept with three SWCNTs. By having three tunneling paths in a single device higher ON-current can be achieved. In this study, the diameter of the tubes and the gate oxide thickness are adjusted to obtain a high I_ON.