DocumentCode :
1462540
Title :
An Engineering Model for Single-Event Effects and Soft Error Rates in Bulk CMOS
Author :
Fulkerson, David E.
Author_Institution :
Honeywell, Plymouth, MN, USA
Volume :
58
Issue :
2
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
506
Lastpage :
515
Abstract :
This paper describes a simple methodology for simulating single-event effects, including soft error rates, of bulk complementary metal-oxide semiconductor integrated circuits. The induced currents due to ion strikes are derived from the basic carrier transport equations and then used in simple SPICE simulations. The 3-D equations were reduced to a 1-D problem. This method is much less expensive than 3-D TCAD for predicting single-event effects, especially when several types of circuits or several critical circuit paths must be investigated. The upset conditions for two SRAMs are simulated, and the results compare well with experiments. A simple method for predicting the soft error rate is also described, including a method for calculating the dimensions of the sensitive volumes for a given circuit.
Keywords :
CMOS integrated circuits; SPICE; SRAM chips; technology CAD (electronics); 3D TCAD; 3D equations; SPICE simulations; SRAM; basic carrier transport equations; bulk CMOS; bulk complementary metal-oxide semiconductor integrated circuits; engineering model; single-event effects; soft error rates; CMOS integrated circuits; Junctions; Logic gates; Mathematical model; Random access memory; SPICE; Semiconductor device modeling; Complementary metal–oxide semiconductor (CMOS); radiation; single-event upset (SEU); soft error rate (SER);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2106801
Filename :
5722062
Link To Document :
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