Title :
An Engineering Model for Single-Event Effects and Soft Error Rates in Bulk CMOS
Author :
Fulkerson, David E.
Author_Institution :
Honeywell, Plymouth, MN, USA
fDate :
4/1/2011 12:00:00 AM
Abstract :
This paper describes a simple methodology for simulating single-event effects, including soft error rates, of bulk complementary metal-oxide semiconductor integrated circuits. The induced currents due to ion strikes are derived from the basic carrier transport equations and then used in simple SPICE simulations. The 3-D equations were reduced to a 1-D problem. This method is much less expensive than 3-D TCAD for predicting single-event effects, especially when several types of circuits or several critical circuit paths must be investigated. The upset conditions for two SRAMs are simulated, and the results compare well with experiments. A simple method for predicting the soft error rate is also described, including a method for calculating the dimensions of the sensitive volumes for a given circuit.
Keywords :
CMOS integrated circuits; SPICE; SRAM chips; technology CAD (electronics); 3D TCAD; 3D equations; SPICE simulations; SRAM; basic carrier transport equations; bulk CMOS; bulk complementary metal-oxide semiconductor integrated circuits; engineering model; single-event effects; soft error rates; CMOS integrated circuits; Junctions; Logic gates; Mathematical model; Random access memory; SPICE; Semiconductor device modeling; Complementary metal–oxide semiconductor (CMOS); radiation; single-event upset (SEU); soft error rate (SER);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2106801