Title :
Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells
Author :
Touré, Gnima ; Hubert, Guillaume ; Castellani-Coulié, Karine ; Duzellier, Sophie ; Portal, Jean-Michel
Author_Institution :
French Aerosp. Labo ratory (ONERA), Toulouse, France
fDate :
6/1/2011 12:00:00 AM
Abstract :
This paper presents the study of the multi collection phenomena in sub-micrometric SRAMs (90 and 65 nm bulk technologies). It compares the relative influence of nMOS and pMOS sensitive zones within the cell by means of electrical simulations. The impact on the definition of an event criterion is discussed.
Keywords :
MOSFET; SRAM chips; circuit simulation; SEU occurrence; bulk technology; multinode collection; nMOS sensitive zones; nanometric SRAM cells; pMOS sensitive zones; single event upset; single node collection; size 65 nm; size 90 nm; sub-micrometric SRAM; Ions; MOS devices; Protons; Random access memory; SPICE; Transient analysis; Transistors; Multi collection mechanism; SPICE modelling; SRAM; prediction; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2110662
