Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit

Author

Moen, Kurt A. ; Najafizadeh, Laleh ; Seungwoo, Jung ; Raman, Ashok ; Turowski, Marek ; Cressler, John D.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

877

Lastpage

884

Abstract

Single-event transients (SETs) are modeled in a SiGe voltage reference using compact model and full 3-D mixed-mode TCAD simulations. The effect of bias dependence and circuit loading on device-level transients is examined with regard to the voltage reference circuit. The circuit SET simulation approaches are benchmarked against measured data to assess their effectiveness in accurate modeling of SET in SiGe analog circuits. The mechanisms driving the SET of this voltage reference are then identified for the first time and traced back to the original device transients. These results enable the differences between the simulation results to be explained, providing new insight into best practices for the modeling circuit SET in different circuit topologies and device technologies.

Keywords

Ge-Si alloys; analogue circuits; integrated circuit modelling; network topology; reference circuits; technology CAD (electronics); 3D mixed-mode TCAD simulations; SiGe; SiGe analog circuits; SiGe voltage reference circuit; circuit SET simulation; circuit topology; compact model; device-level transients; single-event transients; Computational modeling; Heterojunction bipolar transistors; Integrated circuit modeling; Silicon germanium; Solid modeling; Transient analysis; Radiation effects modeling; TCAD; radiation hardening; silicon-germanium (SiGe) heterojunction bipolar transistor (HBT); single-event transients (SETs); voltage reference;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2107333

Filename

5722066