Title :
High Frequency Modeling and Parameter Extraction for Vertical-Cavity Surface Emitting Lasers
Author_Institution :
Sch. of Inf. Sci. & Technol., East China Normal Univ., Shanghai, China
fDate :
6/1/2012 12:00:00 AM
Abstract :
Accurate modeling and efficient parameter extraction of the equivalent circuit model of high-speed vertical-cavity surface emitting lasers (VCSELs) for high-frequency operation based on the rate equations are presented in this paper. The model is versatile in that it permits dc, small signal, and large signal to be performed, and can be easily on commercial circuit software. An analytical method, along with closed-form solution, to determine parasitic elements, intrinsic model parameters and rate equation model parameters of the VCSELs is developed and experimentally verified using on wafer measurement of electronic and optical performance. Modeled and measured results for the input reflection coefficients and modulation responses exhibit good agreement over a wide range of bias points under cutoff and above-threshold biased condition in the frequency range of 50 MHz-20 GHz for an oxide-confined AlGaAs VCSELs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; surface emitting lasers; AlGaAs; closed-form solution; commercial circuit software; electronic performance; equivalent circuit model; frequency 50 MHz to 20 GHz; high frequency modeling; intrinsic model parameters; optical performance; parameter extraction; rate equation model parameters; rate equations; vertical-cavity surface emitting lasers; wafer measurement; Capacitance; Equivalent circuits; Integrated circuit modeling; Mathematical model; Modulation; Semiconductor device modeling; Vertical cavity surface emitting lasers; Device modeling; large model; parameter extraction; small signal model; vertical-cavity surface emitting laser (VCSEL);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2012.2189870