Title :
Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation”
Author :
Connelly, Daniel ; Clifton, Paul
Author_Institution :
Acorn Technol., Palo Alto, CA, USA
fDate :
5/1/2010 12:00:00 AM
Abstract :
Data claimed to support a barrier height between Cl-implanted Ni-Si and Si of as low as 0.08 V are consistent with much higher barrier heights when the effects of series resistance and junction nonideality are considered. Using smaller contacts would provide increased sensitivity to the Schottky barrier heights between the metal and the silicon substrate.
Keywords :
Schottky barriers; chlorine; ion implantation; semiconductor-metal boundaries; silicon compounds; Ni silicide Schottky barrier height; chlorine ion implantation; chlorine ion segregation; junction nonideality; metal; modulation; series resistance; silicon substrate; MOS devices; Schottky barriers; semiconductor device modeling; semiconductor–metal interfaces; silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2044360
