80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors

Author

Agarwal, Bipul ; Lee, Q. ; Mensa, Dino ; Pullela, Raja ; Guthrie, James ; Rodwell, Mark J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

46

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2302

Lastpage

2307

Abstract

We report distributed amplifiers with 80 GHz bandwidth and 6.7 dB mid-band gain. These amplifiers were fabricated in the transferred-substrate heterojunction bipolar transistor integrated circuit technology. Transferred-substrate HBT´s have very high f_max (>400 GHz) and have yielded distributed amplifiers with record gain-bandwidth product

Keywords

bipolar MIMIC; distributed amplifiers; heterojunction bipolar transistors; integrated circuit design; integrated circuit technology; millimetre wave amplifiers; travelling wave amplifiers; wideband amplifiers; 400 GHz; 6.7 dB; 80 GHz; EHF; MIMIC; MM-wave IC fabrication; distributed amplifiers; gain-bandwidth product; heterojunction bipolar transistors; integrated circuit technology; transferred-substrate HBT IC technology; Bandwidth; Broadband amplifiers; Distributed amplifiers; Epitaxial layers; Frequency; HEMTs; Heterojunction bipolar transistors; Impedance; Molecular beam epitaxial growth; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.739215

Filename

739215