112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers

Author

Agarwal, Bipul ; Schmitz, Adele E. ; Brown, J.J. ; Matloubian, Mehran ; Case, Michael G. ; Le, M. ; Lui, M. ; Rodwell, Mark J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

46

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2553

Lastpage

2559

Abstract

We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180 GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-μm gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have yielded record bandwidth broad-band amplifiers

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; travelling wave amplifiers; wideband amplifiers; 0.1 micron; 112 GHz; 157 GHz; 180 GHz; 5 dB; 7 dB; InP; InP HEMT traveling wave amplifier; MIMIC technology; broadband amplifier; cascode gain cell; coplanar waveguide; gate line capacitive division; Bandwidth; Coplanar waveguides; Cutoff frequency; Gain; HEMTs; Indium phosphide; Optical amplifiers; Propagation losses; Transmission line theory; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.739247

Filename

739247