Title :
Characteristics of silicon nitride after O/sub 2/ plasma surface treatment for pH-ISFET applications
Author :
Yin, Li-Te ; Chou, Jung-Chuan ; Chung, Wen-Yaw ; Sun, Tai-Ping ; Hsiung, Shen-Ken
Author_Institution :
Dept. of Biomed. Eng., Chung Yuan Christian Univ., Chung Li, Taiwan
fDate :
3/1/2001 12:00:00 AM
Abstract :
Silicon nitride (Si 3N 4) sensing gate pH-ion-selective field effect transistors (ISFETs) were treated by 2.54-GHz microwave O 2 plasma, the results show the ISFET sensitivity has an advantage up to 24% increment after the plasma treatment. Electron spectroscopy for chemical analysis (ESCA) is used to make sure that the plasma treatment is not just a native oxide cleaning procedure. The samples, which were immobilized with glutaraldehyde used as a bifunctional reagent and 3-aminopropy-Itricthoxysilane used as an adhesion promoter were studied. The binding force between the glucose oxidase and glutaraldehyde immobilized samples, and the element concentrations of nitrogen in 3-aminspropytriethoxysilane immobilized samples are higher which were treated by plasma.
Keywords :
ESCA; biosensors; ion sensitive field effect transistors; pH measurement; proteins; surface treatment; 2.54 GHz; 3-aminopropy-Itricthoxysilane; 3-aminspropytriethoxysilane immobilized samples; O/sub 2/; Si/sub 3/N/sub 4/; adhesion promoter; bifunctional reagent; binding force; electron spectroscopy; element concentrations; glucose oxidase; glutaraldehyde immobilized samples; native oxide cleaning procedure; pH-ion-selective field effect transistors; silicon nitride characteristics; Chemical analysis; Cleaning; Electrons; FETs; Plasma applications; Plasma chemistry; Plasma properties; Silicon; Spectroscopy; Surface treatment; Glucose Oxidase; Glutaral; Hydrogen-Ion Concentration; Ion-Selective Electrodes; Materials Testing; Microwaves; Oxygen; Sensitivity and Specificity; Silanes; Silicon Compounds; Surface Properties; Transistors;
Journal_Title :
Biomedical Engineering, IEEE Transactions on
