Annealing at Different Temperatures of Silicon Microstrip Detectors After Severe Hadron Irradiation

Author

Casse, Gianluigi ; Affolder, Anthony ; Allport, Philip P. ; Chmill, Valery ; Forshaw, Dean ; Greenall, Ashley ; Huse, Torkjell ; Tsurin, Ilya ; Wormald, Michael

Author_Institution

Dept. of Phys., Univ. of Liverpool, Liverpool, UK

Volume

59

Issue

2

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

419

Lastpage

424

Abstract

Two rather recent results from studies performed for preparing high resolution sensors for the future supercolliders (HL-LHC at CERN) have proven that silicon detectors read out with low noise electronics can be used for tracking minimum ionizing particles (mip) after doses up to if high bias voltage and adequate cooling can be routed to the sensors. These are the discovery of the charge multiplication mechanism taking place in irradiated n-in-p silicon detectors and the suppression of the reverse annealing. A discussion of this last feature and the influence of the annealing temperature is presented here.

Keywords

annealing; nuclear electronics; radiation effects; readout electronics; semiconductor counters; CERN; HL-LHC; annealing temperature; charge multiplication mechanism; future supercolliders; high resolution sensor preparation; irradiated n in p silicon detectors; low noise electronics; minimum ionizing particle tracking; mip; reverse annealing suppression; severe hadron irradiation; silicon detector readout; silicon microstrip detectors; Acceleration; Annealing; Detectors; Radiation effects; Silicon; Temperature sensors; HL-LHC; microstrip silicon detectors; radiation tolerance;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2186316

Filename

6164289