DocumentCode
1463561
Title
Antimonide-based 2.3 μm photonic crystal coupled-cavity lasers for CH4
Author
Jahjah, M. ; Moumdji, S. ; Gauthier-Lafaye, Olivier ; Bonnefont, S. ; Rouillard, Y. ; Vicet, A.
Author_Institution
IES, Univ. Montpellier 2, Montpellier, France
Volume
48
Issue
5
fYear
2012
Firstpage
277
Lastpage
278
Abstract
GaInAsSb/AlGaAsSb quantum wells lasers have been grown by molecular beam epitaxy and processed into ridge cavities coupled by an intracavity photonic crystal mirror. The lasers operate at room temperature in the continuous wave regime at 2.35 m. One of these devices was used as an excitation source on a methane sensor based on quartz-enhanced photoacoustic spectroscopy. A spectrophone, consisting of a quartz tuning fork and two steel microresonators, was used. A detection limit of 400 ppbv was achieved using second derivative wavelength modulation detection.
Keywords
III-V semiconductors; arsenic compounds; chemical sensors; gallium arsenide; indium compounds; laser cavity resonators; microcavities; molecular beam epitaxial growth; optical modulation; optical sensors; organic compounds; photoacoustic spectra; photonic crystals; quantum well lasers; remote sensing by laser beam; semiconductor growth; GaInAsSb-AlGaAsSb; QEPAS; coupled cavity lasers; intracavity photonic crystal mirror; methane sensor; microresonators; molecular beam epitaxy; photonic crystal; quantum wells lasers; quartz tuning fork; quartz-enhanced photoacoustic spectroscopy; ridge cavities; room temperature; second derivative wavelength modulation detection; spectrophone; temperature 293 K to 298 K; wavelength 2.3 m; wavelength 2.35 m;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.3614
Filename
6164325
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