• DocumentCode
    1463561
  • Title

    Antimonide-based 2.3 μm photonic crystal coupled-cavity lasers for CH4

  • Author

    Jahjah, M. ; Moumdji, S. ; Gauthier-Lafaye, Olivier ; Bonnefont, S. ; Rouillard, Y. ; Vicet, A.

  • Author_Institution
    IES, Univ. Montpellier 2, Montpellier, France
  • Volume
    48
  • Issue
    5
  • fYear
    2012
  • Firstpage
    277
  • Lastpage
    278
  • Abstract
    GaInAsSb/AlGaAsSb quantum wells lasers have been grown by molecular beam epitaxy and processed into ridge cavities coupled by an intracavity photonic crystal mirror. The lasers operate at room temperature in the continuous wave regime at 2.35 m. One of these devices was used as an excitation source on a methane sensor based on quartz-enhanced photoacoustic spectroscopy. A spectrophone, consisting of a quartz tuning fork and two steel microresonators, was used. A detection limit of 400 ppbv was achieved using second derivative wavelength modulation detection.
  • Keywords
    III-V semiconductors; arsenic compounds; chemical sensors; gallium arsenide; indium compounds; laser cavity resonators; microcavities; molecular beam epitaxial growth; optical modulation; optical sensors; organic compounds; photoacoustic spectra; photonic crystals; quantum well lasers; remote sensing by laser beam; semiconductor growth; GaInAsSb-AlGaAsSb; QEPAS; coupled cavity lasers; intracavity photonic crystal mirror; methane sensor; microresonators; molecular beam epitaxy; photonic crystal; quantum wells lasers; quartz tuning fork; quartz-enhanced photoacoustic spectroscopy; ridge cavities; room temperature; second derivative wavelength modulation detection; spectrophone; temperature 293 K to 298 K; wavelength 2.3 m; wavelength 2.35 m;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.3614
  • Filename
    6164325