Title :
Fabrication of In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diodes grown on inp by molecular beam epitaxy
Author :
Kawamura, Yuriko ; Mitsuyoshi, K.
Author_Institution :
Grad. Sch. of Eng., Osaka Prefecture Univ., Sakai, Japan
Abstract :
An In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diode (RTD) has been fabricated by molecular beam epitaxy on InP substrates for the first time. A clear negative differential resistance (NDR) characteristic was observed at room temperature, where the peak/valley (P/V) ratio is as high as 19.6. This result indicates that the use of an InGaAsN layer in the RTD structure is very effective on obtaining an NDR characteristic with high P/V ratio.
Keywords :
aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; resonant tunnelling diodes; wide band gap semiconductors; In0.53Ga0.47AsN0.01-AlAs0.56Sb0.44; InP; NDR characteristic; RTD; molecular beam epitaxy; negative differential resistance characteristic; resonant tunnelling diodes; temperature 293 K to 298 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0186
