DocumentCode :
1463709
Title :
Limits of integrated-circuit manufacturing
Author :
Doering, Robert ; Nishi, Yoshio
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Volume :
89
Issue :
3
fYear :
2001
fDate :
3/1/2001 12:00:00 AM
Firstpage :
375
Lastpage :
393
Abstract :
A methodology is suggested for the study of integrated-circuit manufacturing limits. It is based on a hierarchical view of manufacturing detractors and associates limits with levels in this hierarchy. The methodology is illustrated with examples of steady-state, theoretical, and process limits at today´s state of the art as well as example projections to future manufacturing at what may be near the limits of complementary metal-oxide-semiconductor (CMOS) scaling. There are also some speculations on possibilities beyond these limits
Keywords :
CMOS integrated circuits; integrated circuit manufacture; reviews; CMOS scaling; IC manufacturing limits; integrated circuit manufacturing; process limits; CMOS process; Circuits; Costs; Instruments; Manufacturing processes; Material properties; Pulp manufacturing; Semiconductor device manufacture; Semiconductor devices; Steady-state;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.915380
Filename :
915380
Link To Document :
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