Title :
New paradigm of silicon technology
Author :
Ohmi, Tadahiro ; Sugawa, Shigetoshi ; Kotani, Koji ; Hirayama, Masaki ; Morimoto, Akihiro
Author_Institution :
New Ind. Creation Hatchery Centre, Tohoku Univ., Sendai, Japan
fDate :
3/1/2001 12:00:00 AM
Abstract :
We present a new paradigm of Si technologies to establish a gigahertz-operation gigascale integrated system large-scale integration (LSI), including digital and analog circuits. According to the theoretical analysis of high-speed signal propagation properties in the practical LSI structure, a gas-isolated-interconnect high-k gate dielectric metal-gate metal-substrate silicon-on-insulator (SOI) LSI structure is proposed as a possible solution for a future gigahertz GSI system LSI, where the clock rate is improved up to beyond 10 GHz and the minimum feature size is reduced down to 0.035 μm in keeping with the continuous progress of the LSI´s speed performance. Perfect scientific manufacturing free from fluctuations consisting of total low-temperature high-quality and high-speed processes based on very high-density plasma having very low electron temperatures is essential to realize them
Keywords :
ULSI; elemental semiconductors; high-speed integrated circuits; integrated circuit interconnections; integrated circuit technology; mixed analogue-digital integrated circuits; silicon; silicon-on-insulator; 0.035 micron; 10 GHz; ASIC; Si; Si technology; clock rate; digital/analog circuits; gas-isolated-interconnect; gigahertz GSI system LSI; gigahertz operation; gigascale integrated system LSI; high-k gate dielectric; high-speed processes; high-speed signal propagation properties; large-scale integration; low-temperature high-quality processes; metal-gate metal-substrate SOI LSI structure; minimum feature size; silicon-on-insulator LSI structure; very high-density plasma; Analog circuits; Clocks; Fluctuations; Integrated circuit technology; Large scale integration; Manufacturing processes; Performance analysis; Plasma temperature; Signal analysis; Silicon on insulator technology;
Journal_Title :
Proceedings of the IEEE
