Title :
Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology
Author :
Lin, Jau-Jr ; To, Kun-Hin ; Hammock, Donna ; Knappenberger, Bill ; Majerus, Michael ; Huang, W. Margaret
Author_Institution :
RF, Analog & Sensor Group, Freescale Semicond. Inc., Tempe, AZ, USA
fDate :
5/1/2010 12:00:00 AM
Abstract :
This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a +9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at Pin = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range (-40??C to 125??C) at 77 GHz range.
Keywords :
CMOS integrated circuits; automotive electronics; low-power electronics; millimetre wave amplifiers; millimetre wave radar; automotive radar; frequency 77 GHz; gain 11.3 dB; gain 12.4 dB; low power 1P6M CMOS technology; power amplifier; size 90 nm; temperature -40 C to 125 C; CMOS; RADAR; millimeter-wave; power amplifier;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2045598
