DocumentCode
1463896
Title
40 Gbit/s GaAs P-HEMT driver module for optical communications
Author
Thiam, A. ; Legros, E. ; Vuye, S. ; Andri, P. ; Wawrzynkowski, E. ; Joly, C.
Author_Institution
France Telecom/CNET, OPTO+, Marcoussis, France
Volume
34
Issue
23
fYear
1998
fDate
11/12/1998 12:00:00 AM
Firstpage
2232
Lastpage
2234
Abstract
A 40 Gbit/s driver module incorporating a set of two original double-distributed amplifiers, based on 0.15 μm GaAs P-HEMT (high electron mobility transistor) technology, has been designed and realised. This module provides a state-of-the-art output driving voltage of near 3 Vpp, into a 50 Ω load, and an 18 dB gain over a DC to 41.5 GHz bandwidth: it is able to drive a high speed electroabsorption modulator
Keywords
HEMT integrated circuits; III-V semiconductors; distributed amplifiers; driver circuits; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; optical communication equipment; 0.15 micron; 18 dB; 3 V; 40 Gbit/s; 41.5 GHz; GaAs; GaAs P-HEMT driver module; double distributed amplifier; high electron mobility transistor; high speed electroabsorption modulator; optical communication;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981550
Filename
739627
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