Title :
SiC devices for advanced power and high-temperature applications
Author :
Wondrak, Wolfgang ; Held, Raban ; Niemann, Ekkehard ; Schmid, Ulrich
Author_Institution :
Res. & Technol., DaimlerCrystal AG, Frankfurt on Main, Germany
fDate :
4/1/2001 12:00:00 AM
Abstract :
Silicon carbide (SiC) process technology has made rapid progress, resulting in the realization of very promising electronic devices and sensors, enabling advanced solutions in power industry and mobile systems. In particular, for electronics working under harsh environmental conditions, SiC devices reach unprecedented performance. Transfer to production has already started for some applications
Keywords :
MIS devices; power semiconductor devices; semiconductor materials; silicon compounds; SiC; SiC power electronic devices; advanced power applications; harsh environmental conditions; high-temperature applications; mobile systems; power industry; sensors; Chemical sensors; Insulated gate bipolar transistors; Intelligent sensors; Power electronics; Schottky diodes; Semiconductor diodes; Silicon carbide; Switching loss; Temperature sensors; Thermal conductivity;
Journal_Title :
Industrial Electronics, IEEE Transactions on
