DocumentCode
1464060
Title
RF W-band wafer-to-wafer transition
Author
Herrick, Katherine J. ; Katehi, Linda P B
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
49
Issue
4
fYear
2001
fDate
4/1/2001 12:00:00 AM
Firstpage
600
Lastpage
608
Abstract
Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides printed on the adjacent faces of two vertically stacked silicon wafers. In addition to serving as a versatile low-temperature thermocompression wafer bond, loss of approximately 0.1 dB is measured for this novel compact packaged wafer-to-wafer transition from 75 to 110 GHz
Keywords
MIMIC; coplanar waveguides; elemental semiconductors; integrated circuit packaging; silicon; wafer bonding; 0.1 dB; 75 to 110 GHz; Si; W-band; coplanar waveguides; electrical connection; electrical signals; low-temperature thermocompression wafer bond; multiwafer designs; two-layer electrical bond; vertically stacked wafers; wafer-to-wafer transition; Circuits; Diffusion bonding; Glass; Micromechanical devices; Packaging; Power generation economics; Radio frequency; Silicon; Temperature; Wafer bonding;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.915432
Filename
915432
Link To Document