• DocumentCode
    1464069
  • Title

    High-performance InAs quantum well Hall sensors on germanium substrates

  • Author

    Behet, M. ; De Boeck, J. ; Borghs, G. ; Mijlemans, P.

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    34
  • Issue
    23
  • fYear
    1998
  • fDate
    11/12/1998 12:00:00 AM
  • Firstpage
    2273
  • Lastpage
    2274
  • Abstract
    High quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy. The excellent transport properties resulted in sensitivities of 0.85 T -1 (voltage drive) and 370 V/A/T (current drive) for a cross-shaped sensor at room temperature. The results show that the performance of Hall sensors on germanium and on GaAs substrates is comparable in terms of sensitivity and temperature stability
  • Keywords
    Hall effect transducers; III-V semiconductors; indium compounds; magnetic sensors; molecular beam epitaxial growth; quantum well devices; Ge; InAs quantum well Hall sensor; InAs-Al0.2Ga0.8Sb; germanium substrate; molecular beam epitaxy; sensitivity; temperature stability; transport properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981540
  • Filename
    739664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1464069